Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

R. A B Devine, H. P. Hjalmarson, H. N. Alshareef, M. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

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@article{ecff40f7cd574b5db241c9d80b1473c5,

title = "Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices",

author = "Devine, {R. A B} and Hjalmarson, {H. P.} and Alshareef, {H. N.} and M. Quevedo-Lopez",

year = "2008",

month = apr,

day = "24",

doi = "10.1063/1.2912025",

language = "American English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}