Original language | American English |
---|---|
Journal | Applied Physics Letters |
DOIs | |
State | Published - 24 Apr 2008 |
Externally published | Yes |
Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices
R. A B Devine, H. P. Hjalmarson, H. N. Alshareef, M. Quevedo-Lopez
Research output: Contribution to journal › Article › peer-review