Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

R. A B Devine, H. P. Hjalmarson, H. N. Alshareef, M. Quevedo-Lopez

Research output: Contribution to journalArticle

Original languageAmerican English
JournalApplied Physics Letters
DOIs
StatePublished - 24 Apr 2008
Externally publishedYes

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