Original language | American English |
---|---|
Pages (from-to) | 2945-2948 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
DOIs | |
State | Published - 25 Apr 2006 |
Externally published | Yes |
Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks
Siddarth A. Krishnan, Manuel Quevedo, Rusty Harris, Paul D. Kirsch, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, Jack C. Lee
Research output: Contribution to journal › Article › peer-review
7
Scopus
citations