Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks

Siddarth A. Krishnan; Manuel Quevedo; Rusty Harris; Paul D. Kirsch; Rino Choi; Byoung Hun Lee; Gennadi Bersuker; Jack C. Lee

doi:10.1143/JJAP.45.2945

Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks

Siddarth A. Krishnan, Manuel Quevedo, Rusty Harris, Paul D. Kirsch, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, Jack C. Lee

Research output: Contribution to journal › Article

7 Scopus citations

Original language	American English
Pages (from-to)	2945-2948
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
DOIs	https://doi.org/10.1143/JJAP.45.2945
State	Published - 25 Apr 2006
Externally published	Yes

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Krishnan, S. A., Quevedo, M., Harris, R., Kirsch, P. D., Choi, R., Lee, B. H., Bersuker, G., & Lee, J. C. (2006). Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2945-2948. https://doi.org/10.1143/JJAP.45.2945

Krishnan, Siddarth A. ; Quevedo, Manuel ; Harris, Rusty ; Kirsch, Paul D. ; Choi, Rino ; Lee, Byoung Hun ; Bersuker, Gennadi ; Lee, Jack C. / Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; pp. 2945-2948.

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title = "Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks",

author = "Krishnan, {Siddarth A.} and Manuel Quevedo and Rusty Harris and Kirsch, {Paul D.} and Rino Choi and Lee, {Byoung Hun} and Gennadi Bersuker and Lee, {Jack C.}",

year = "2006",

month = apr,

day = "25",

doi = "10.1143/JJAP.45.2945",

language = "American English",

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Krishnan, SA, Quevedo, M, Harris, R, Kirsch, PD, Choi, R, Lee, BH, Bersuker, G & Lee, JC 2006, 'Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, pp. 2945-2948. https://doi.org/10.1143/JJAP.45.2945

Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks. / Krishnan, Siddarth A.; Quevedo, Manuel; Harris, Rusty; Kirsch, Paul D.; Choi, Rino; Lee, Byoung Hun; Bersuker, Gennadi; Lee, Jack C.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 25.04.2006, p. 2945-2948.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks

AU - Krishnan, Siddarth A.

AU - Quevedo, Manuel

AU - Harris, Rusty

AU - Kirsch, Paul D.

AU - Choi, Rino

AU - Lee, Byoung Hun

AU - Bersuker, Gennadi

AU - Lee, Jack C.

PY - 2006/4/25

Y1 - 2006/4/25

U2 - 10.1143/JJAP.45.2945

DO - 10.1143/JJAP.45.2945

M3 - Article

SP - 2945

EP - 2948

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

SN - 0021-4922

ER -

Krishnan SA, Quevedo M, Harris R, Kirsch PD, Choi R, Lee BH et al. Negative bias temperature instability dependence on dielectric thickness and nitrogen concentration in ultra-scaled HfSiON dielectric/TiN gate stacks. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 Apr 25;2945-2948. https://doi.org/10.1143/JJAP.45.2945