Nonpolar Resistive Switching of Multilayer-hBN-Based Memories

Pingping Zhuang; Weiyi Lin; Jaehyun Ahn; Massimo Catalano; Harry Chou; Anupam Roy; Manuel Quevedo-Lopez; Luigi Colombo; Weiwei Cai; Sanjay K. Banerjee

doi:10.1002/aelm.201900979

Nonpolar Resistive Switching of Multilayer-hBN-Based Memories

Pingping Zhuang, Weiyi Lin, Jaehyun Ahn, Massimo Catalano, Harry Chou, Anupam Roy, Manuel Quevedo-Lopez, Luigi Colombo, Weiwei Cai, Sanjay K. Banerjee

Research output: Contribution to journal › Article

3 Scopus citations

Original language	American English
Journal	Advanced Electronic Materials
DOIs	https://doi.org/10.1002/aelm.201900979
State	Published - 1 Jan 2020
Externally published	Yes

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10.1002/aelm.201900979

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Zhuang, P., Lin, W., Ahn, J., Catalano, M., Chou, H., Roy, A., Quevedo-Lopez, M., Colombo, L., Cai, W., & Banerjee, S. K. (2020). Nonpolar Resistive Switching of Multilayer-hBN-Based Memories. Advanced Electronic Materials. https://doi.org/10.1002/aelm.201900979

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AU - Roy, Anupam

AU - Quevedo-Lopez, Manuel

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AU - Banerjee, Sanjay K.

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