TY - JOUR
T1 - Nonpolar Resistive Switching of Multilayer-hBN-Based Memories
AU - Zhuang, Pingping
AU - Lin, Weiyi
AU - Ahn, Jaehyun
AU - Catalano, Massimo
AU - Chou, Harry
AU - Roy, Anupam
AU - Quevedo-Lopez, Manuel
AU - Colombo, Luigi
AU - Cai, Weiwei
AU - Banerjee, Sanjay K.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high-density, cross-point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non-volatile nonpolar RS phenomenon of hBN-based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈103 cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re-set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology.
AB - © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high-density, cross-point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non-volatile nonpolar RS phenomenon of hBN-based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈103 cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re-set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology.
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U2 - 10.1002/aelm.201900979
DO - 10.1002/aelm.201900979
M3 - Article
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
ER -