Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix

H. J. Higuera-Valenzuela*, F. Romo-García, D. Cabrera-German, A. Ramos-Carrazco, R. Rosas-Burgos, R. García-Gutierrez, O. E. Contreras, D. Berman-Mendoza

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.

Original languageEnglish
Pages (from-to)157-159
Number of pages3
JournalMaterials Letters
StatePublished - 1 Oct 2018

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.


  • Down-shifting
  • Photoluminescence
  • Silicon quantum dots
  • Sol-gel
  • Solar cells
  • Zinc oxide


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