Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix

H. J. Higuera-Valenzuela; F. Romo-García; D. Cabrera-German; A. Ramos-Carrazco; R. Rosas-Burgos; R. García-Gutierrez; O. E. Contreras; D. Berman-Mendoza

doi:10.1016/j.matlet.2018.05.115

Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix

H. J. Higuera-Valenzuela^*, F. Romo-García, D. Cabrera-German, A. Ramos-Carrazco, R. Rosas-Burgos, R. García-Gutierrez, O. E. Contreras, D. Berman-Mendoza

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.

Original language	English
Pages (from-to)	157-159
Number of pages	3
Journal	Materials Letters
Volume	228
DOIs	https://doi.org/10.1016/j.matlet.2018.05.115
State	Published - 1 Oct 2018

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

Down-shifting
Photoluminescence
Silicon quantum dots
Sol-gel
Solar cells
Zinc oxide

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title = "Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix",

abstract = "At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.",

keywords = "Down-shifting, Photoluminescence, Silicon quantum dots, Sol-gel, Solar cells, Zinc oxide",

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doi = "10.1016/j.matlet.2018.05.115",

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AU - Higuera-Valenzuela, H. J.

AU - Romo-García, F.

AU - Cabrera-German, D.

AU - Ramos-Carrazco, A.

AU - Rosas-Burgos, R.

AU - García-Gutierrez, R.

AU - Contreras, O. E.

AU - Berman-Mendoza, D.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.

AB - At the present work, a novel two-stage method for the synthesis of zinc oxide (ZnO) films with silicon quantum dots embedded (SiQDs-ZnO) is reported. The experimental procedure consisting on ZnO matrix produced by the sol-gel technique and silicon quantum dots (Si-QDs) synthesized by a green synthesis is described. The incorporation of the Si-QDs on the ZnO films was obtained by spin coating followed by a post-deposition air annealing at 400 °C. The XPS results show that the Si-QDs were successfully embedded in the ZnO matrix. The effect of the tunable bandgap (Eg) of the ZnO with the addition of Si-QDs was obtained which is consistent with the Burstein-Moss effect. The enhancement of the photoluminescence (PL) of the ZnO films with the increment of Si content is presented.

KW - Down-shifting

KW - Photoluminescence

KW - Silicon quantum dots

KW - Sol-gel

KW - Solar cells

KW - Zinc oxide

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DO - 10.1016/j.matlet.2018.05.115

M3 - Artículo

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SN - 0167-577X

VL - 228

SP - 157

EP - 159

JO - Materials Letters

JF - Materials Letters

ER -

Novel two-stage method for the synthesis of silicon quantum dots embedded on ZnO matrix

Abstract

Bibliographical note

Keywords

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