Nucleation and growth study of atomic layer deposited HfO <inf>2</inf> gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, M. A. Quevedo-Lopez, H. J. Li, Y. Senzaki, J. J. Peterson, S. C. Song, S. A. Krishnan, N. Moumen, J. Barnett, G. Bersuker, P. Y. Hung, B. H. Lee, T. Lafford, Q. Wang, D. Gay, J. G. Ekerdt

Research output: Contribution to journalArticlepeer-review

112 Scopus citations
Original languageAmerican English
JournalJournal of Applied Physics
DOIs
StatePublished - 15 Jan 2006
Externally publishedYes

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