On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition

M. Aceves-Mijares, A. A. González-Fernández, R. López-Estopier, A. Luna-López, D. Berman-Mendoza, A. Morales, C. Falcony, C. Domnguez, R. Murphy-Arteaga

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Abstract

Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100 C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy. Copyright © 2012 M. Aceves-Mijares et al.
Original languageAmerican English
JournalJournal of Nanomaterials
DOIs
StatePublished - 17 Aug 2012

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