TY - JOUR
T1 - On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition
AU - Aceves-Mijares, M.
AU - González-Fernández, A. A.
AU - López-Estopier, R.
AU - Luna-López, A.
AU - Berman-Mendoza, D.
AU - Morales, A.
AU - Falcony, C.
AU - Domnguez, C.
AU - Murphy-Arteaga, R.
PY - 2012
Y1 - 2012
N2 - Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100 C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.
AB - Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100 C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.
UR - http://www.scopus.com/inward/record.url?scp=84864924853&partnerID=8YFLogxK
U2 - 10.1155/2012/890701
DO - 10.1155/2012/890701
M3 - Artículo
SN - 1687-4110
VL - 2012
JO - Journal of Nanomaterials
JF - Journal of Nanomaterials
M1 - 890701
ER -