Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

E. Fuentes-Fernandez; L. Baldenegro-Perez; M. Quevedo-Lopez; Bruce Gnade; A. Hande; P. Shah; H. N. Alshareef

doi:10.1016/j.sse.2011.05.027

Optimization of Pb(Zr_0.53,Ti_0.47)O₃ films for micropower generation using integrated cantilevers

E. Fuentes-Fernandez
, L. Baldenegro-Perez
, M. Quevedo-Lopez
, Bruce Gnade
, A. Hande
, P. Shah
, H. N. Alshareef^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Lead zirconate titanate, Pb(Zr_0.53,Ti_0.47)O ₃ or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO₂/Si substrates with a sol-gel derived ZrO₂ buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO₂ surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Solid-State Electronics
Volume	63
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.05.027
State	Published - Sep 2011
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.

Keywords

Cantilever
Integration
MEMS
PZT
Perovskite
Piezoelectric material

Access to Document

10.1016/j.sse.2011.05.027

Cite this

@article{b084b0398c8e4398911293664d3509ca,

title = "Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers",

abstract = "Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.",

keywords = "Cantilever, Integration, MEMS, PZT, Perovskite, Piezoelectric material",

author = "E. Fuentes-Fernandez and L. Baldenegro-Perez and M. Quevedo-Lopez and Bruce Gnade and A. Hande and P. Shah and Alshareef, \{H. N.\}",

note = "Funding Information: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process. ",

year = "2011",

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T1 - Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

AU - Fuentes-Fernandez, E.

AU - Baldenegro-Perez, L.

AU - Quevedo-Lopez, M.

AU - Gnade, Bruce

AU - Hande, A.

AU - Shah, P.

AU - Alshareef, H. N.

N1 - Funding Information: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.

PY - 2011/9

Y1 - 2011/9

N2 - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

AB - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g.

KW - Cantilever

KW - Integration

KW - MEMS

KW - PZT

KW - Perovskite

KW - Piezoelectric material

UR - https://www.scopus.com/pages/publications/80051793536

U2 - 10.1016/j.sse.2011.05.027

DO - 10.1016/j.sse.2011.05.027

M3 - Artículo

SN - 0038-1101

VL - 63

SP - 89

EP - 93

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -