@inproceedings{be824eaf5ae34e8bb2f1e8e29c67bae3,
title = "Optimization of the characteristics of a quadrant photodiode",
abstract = "We optimized the characteristics of a silicon quadrant-type photodiode to operate in the visible region by simulating its fabrication process based on CMOS integrated circuit technology. The design parameters analyzed in this fabrication process are the density of ions and necessary energy for its implantation as well as the temperature and time of thermal treatment. The efficiency of the photodiode was increased by optimizing the density of carriers when phosphor dopants were used. As a result of our optimization process we obtained a pn junction depth of 2.8μm. In order to absorb most of the energy from the incident photons, within a desired spectral region, the depletion region of our photodiode showed a variation (which depends on the applied direct bias voltage) from 1.22 μm to 7.32 μm. Although our device was optimized to operate with a detection peak of 650 nm, it is possible to detect light in the spectral range from 450 to 850 nm.",
keywords = "CMOS technology, Depletion region, Four quadrant detector",
author = "Marquina, {A. Vera} and D. Berman and Gonz{\'a}lez, {L. A.}",
year = "2008",
doi = "10.1063/1.2926959",
language = "Ingl{\'e}s",
isbn = "9780735405110",
series = "AIP Conference Proceedings",
pages = "720--724",
booktitle = "RIAO/OPTILAS 2007 - 6th Ibero-American Conference on Optics (RIAO) and the 9th Latin-American Meeting on Optics, Lasers and Applications (OPTILAS)",
note = "6th Ibero-American Conference onOptics and 9th Latin-American Meeting on Optics, Lasers and Applications, RIAO/OPTILAS 2007 ; Conference date: 21-10-2007 Through 26-10-2007",
}