Optimizing diode thickness for thin-film solid state thermal neutron detectors

John W. Murphy; George R. Kunnen; Israel Mejia; Manuel A. Quevedo-Lopez; David Allee; Bruce Gnade

doi:10.1063/1.4757292

Optimizing diode thickness for thin-film solid state thermal neutron detectors

John W. Murphy^*, George R. Kunnen, Israel Mejia, Manuel A. Quevedo-Lopez, David Allee, Bruce Gnade

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, ¹⁰B and ⁶LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

Original language	English
Article number	143506
Journal	Applied Physics Letters
Volume	101
Issue number	14
DOIs	https://doi.org/10.1063/1.4757292
State	Published - 1 Oct 2012
Externally published	Yes

Bibliographical note

Funding Information:
We would like to acknowledge the support of the United States Department of Homeland Security and the National Science Foundation, Grant No. ECCS-11139986.

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title = "Optimizing diode thickness for thin-film solid state thermal neutron detectors",

abstract = "In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, 10B and 6LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.",

author = "Murphy, {John W.} and Kunnen, {George R.} and Israel Mejia and Quevedo-Lopez, {Manuel A.} and David Allee and Bruce Gnade",

note = "Funding Information: We would like to acknowledge the support of the United States Department of Homeland Security and the National Science Foundation, Grant No. ECCS-11139986.",

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AU - Murphy, John W.

AU - Kunnen, George R.

AU - Mejia, Israel

AU - Quevedo-Lopez, Manuel A.

AU - Allee, David

AU - Gnade, Bruce

N1 - Funding Information: We would like to acknowledge the support of the United States Department of Homeland Security and the National Science Foundation, Grant No. ECCS-11139986.

PY - 2012/10/1

Y1 - 2012/10/1

N2 - In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, 10B and 6LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

AB - In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, 10B and 6LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

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U2 - 10.1063/1.4757292

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Optimizing diode thickness for thin-film solid state thermal neutron detectors

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