P-type thin films transistors with solution-deposited lead sulfide films as semiconductor

A. Carrillo-Castillo, A. Salas-Villasenor, I. Mejia, S. Aguirre-Tostado, B. E. Gnade, M. A. Quevedo-López*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was ∼ 0.09 cm 2 V - 1 s - 1 whereas the mobility for devices annealed at 150 °C/h in forming gas increased up to ∼ 0.14 cm 2 V - 1 s - 1. Besides the thermal annealing, the entire fabrications process was maintained below 100 °C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 °C anneal as well as a function of the PbS active layer thicknesses.

Original languageEnglish
Pages (from-to)3107-3110
Number of pages4
JournalThin Solid Films
Volume520
Issue number7
DOIs
StatePublished - 31 Jan 2012
Externally publishedYes

Keywords

  • Chemical bath deposition
  • Lead sulfide
  • Thin films transistors

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