Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

Carlos Avila-Avendano; Adelmo Ortiz-Conde; Jesus A. Caraveo-Frescas; Manuel A. Quevedo-Lopez

doi:10.1007/s42341-020-00268-y

Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

Carlos Avila-Avendano, Adelmo Ortiz-Conde^*, Jesus A. Caraveo-Frescas, Manuel A. Quevedo-Lopez

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.

Original language	English
Pages (from-to)	550-556
Number of pages	7
Journal	Transactions on Electrical and Electronic Materials
Volume	22
Issue number	4
DOIs	https://doi.org/10.1007/s42341-020-00268-y
State	Published - Aug 2021

Bibliographical note

Publisher Copyright:
© 2020, The Korean Institute of Electrical and Electronic Material Engineers.

Keywords

Contact ideality factor
MOSFET
Parameter extraction
Thin-film transistors (TFTs)
Triode-region
Weak-inversion output characteristic

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10.1007/s42341-020-00268-y

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title = "Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region",

abstract = "A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.",

keywords = "Contact ideality factor, MOSFET, Parameter extraction, Thin-film transistors (TFTs), Triode-region, Weak-inversion output characteristic",

author = "Carlos Avila-Avendano and Adelmo Ortiz-Conde and Caraveo-Frescas, {Jesus A.} and Quevedo-Lopez, {Manuel A.}",

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T1 - Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

AU - Avila-Avendano, Carlos

AU - Ortiz-Conde, Adelmo

AU - Caraveo-Frescas, Jesus A.

AU - Quevedo-Lopez, Manuel A.

PY - 2021/8

Y1 - 2021/8

N2 - A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.

AB - A novel method for the parameter extraction of thin-film transistors in weak-conduction and triode-region is presented. The parameter extraction is performed using two different and consistent functions based on the integration of experimental output characteristic. The method was tested using measured data of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and the results were compared with previously reported conventional methods.

KW - Contact ideality factor

KW - MOSFET

KW - Parameter extraction

KW - Thin-film transistors (TFTs)

KW - Triode-region

KW - Weak-inversion output characteristic

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U2 - 10.1007/s42341-020-00268-y

DO - 10.1007/s42341-020-00268-y

M3 - Artículo

AN - SCOPUS:85096397598

SN - 1229-7607

VL - 22

SP - 550

EP - 556

JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 4

ER -

Parameter Extraction Using the Output Characteristics of Thin-Film Transistors in Weak-Conduction and Triode-Region

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