Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °c

R. A. Rodriguez-Davila, I. Mejia, R. A. Chapman, C. D. Young, M. Quevedo-Lopez

Research output: Contribution to journalArticle

1 Scopus citations
Original languageAmerican English
Pages (from-to)3861-3866
Number of pages6
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - 1 Jan 2019
Externally publishedYes

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