Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition

A. L. Salas-Villasenor, I. Mejia, M. Sotelo-Lerma, B. E. Gnade, M. A. Quevedo-Lopez

Research output: Contribution to journalArticleResearchpeer-review

14 Citations (Scopus)
Original languageAmerican English
JournalApplied Physics Letters
DOIs
StatePublished - 24 Dec 2012

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cadmium sulfides
transistors
thin films
carrier mobility
threshold voltage
cadmium
hydroxides
thick films
baths
deposits
impurities
fabrication
physics
electric potential

Cite this

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title = "Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition",
author = "Salas-Villasenor, {A. L.} and I. Mejia and M. Sotelo-Lerma and Gnade, {B. E.} and Quevedo-Lopez, {M. A.}",
year = "2012",
month = "12",
day = "24",
doi = "10.1063/1.4773184",
language = "American English",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",

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Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition. / Salas-Villasenor, A. L.; Mejia, I.; Sotelo-Lerma, M.; Gnade, B. E.; Quevedo-Lopez, M. A.

In: Applied Physics Letters, 24.12.2012.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Performance and stability of solution-based cadmium sulfide thin film transistors: Role of CdS cluster size and film composition

AU - Salas-Villasenor, A. L.

AU - Mejia, I.

AU - Sotelo-Lerma, M.

AU - Gnade, B. E.

AU - Quevedo-Lopez, M. A.

PY - 2012/12/24

Y1 - 2012/12/24

U2 - 10.1063/1.4773184

DO - 10.1063/1.4773184

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -