Phosphorus and arsenic penetration studies through HfSi<inf>x</inf>O <inf>y</inf> and HfSi<inf>x</inf>O<inf>y</inf>N<inf>z</inf> films

M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. Li-Fatou, M. J. Bevan, L. Colombo

Research output: Contribution to journalArticle

37 Scopus citations
Original languageAmerican English
Pages (from-to)1609-1611
Number of pages3
JournalApplied Physics Letters
DOIs
StatePublished - 26 Aug 2002
Externally publishedYes

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    Quevedo-Lopez, M. A., El-Bouanani, M., Kim, M. J., Gnade, B. E., Wallace, R. M., Visokay, M. R., Li-Fatou, A., Bevan, M. J., & Colombo, L. (2002). Phosphorus and arsenic penetration studies through HfSi<inf>x</inf>O <inf>y</inf> and HfSi<inf>x</inf>O<inf>y</inf>N<inf>z</inf> films. Applied Physics Letters, 1609-1611. https://doi.org/10.1063/1.1502910