Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth

Ana M. Herrera; Antonio Ramos; Rafael García; Erick Gastellóu; Godofredo García; Roberto C. Carrillo; Irela Santos; Francisco Brown; Roberto Mora; Gustavo A. Hirata

doi:10.1016/j.optmat.2022.113223

Photoluminescence emission in the red band at low temperatures in type-island layers of the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth

Ana M. Herrera^*, Antonio Ramos, Rafael García, Erick Gastellóu, Godofredo García, Roberto C. Carrillo, Irela Santos, Francisco Brown, Roberto Mora, Gustavo A. Hirata

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Type-island layers for the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure were grown on GaAs substrates at 600 °C, via liquid phase epitaxy with a growth rate of 0.5 °C/min for 4 min. Air leaks, as well as severe temperature gradients across the graphite sliding boat, were related to the discontinuous growth (type-island). On the other hand, the mechanism of Stranski-Krastanov growth was used to describe the growth of the type-island layers. High-resolution x-ray diffraction showed a minimal lattice mismatch between layers and substrate with a value of 0.0371%. Scanning electron microscopy showed a type-island rectangular shape with a size of 2.059 μm in width and 3.586 μm in large, with an average thickness of 291 nm. Photoluminescence studies at low temperature and room temperature demonstrated energy emission located in the red band at 1.76 eV (703 nm), which was related to free-to-bound and donor-acceptor transitions. I–V measurements for the Al_0.32Ga_0.68As/Al_0.29Ga_0.71As/GaAs structure showed the typical curve for light emitting diode, with a threshold voltage of 0.429 V.

Original language	English
Article number	113223
Journal	Optical Materials
Volume	134
DOIs	https://doi.org/10.1016/j.optmat.2022.113223
State	Published - Dec 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

GaAs
LPE
Photoluminescence (PL)
Semiconductor compounds
Type-island growth

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Herrera, A. M., Ramos, A., García, R., Gastellóu, E., García, G., Carrillo, R. C., Santos, I., Brown, F., Mora, R., & Hirata, G. A. (2022). Photoluminescence emission in the red band at low temperatures in type-island layers of the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth. Optical Materials, 134, Article 113223. https://doi.org/10.1016/j.optmat.2022.113223

@article{424969487ca046138efb83384d643ccc,

title = "Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth",

abstract = "Type-island layers for the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure were grown on GaAs substrates at 600 °C, via liquid phase epitaxy with a growth rate of 0.5 °C/min for 4 min. Air leaks, as well as severe temperature gradients across the graphite sliding boat, were related to the discontinuous growth (type-island). On the other hand, the mechanism of Stranski-Krastanov growth was used to describe the growth of the type-island layers. High-resolution x-ray diffraction showed a minimal lattice mismatch between layers and substrate with a value of 0.0371%. Scanning electron microscopy showed a type-island rectangular shape with a size of 2.059 μm in width and 3.586 μm in large, with an average thickness of 291 nm. Photoluminescence studies at low temperature and room temperature demonstrated energy emission located in the red band at 1.76 eV (703 nm), which was related to free-to-bound and donor-acceptor transitions. I–V measurements for the Al0.32Ga0.68As/Al0.29Ga0.71As/GaAs structure showed the typical curve for light emitting diode, with a threshold voltage of 0.429 V.",

keywords = "GaAs, LPE, Photoluminescence (PL), Semiconductor compounds, Type-island growth",

author = "Herrera, {Ana M.} and Antonio Ramos and Rafael Garc{\'i}a and Erick Gastell{\'o}u and Godofredo Garc{\'i}a and Carrillo, {Roberto C.} and Irela Santos and Francisco Brown and Roberto Mora and Hirata, {Gustavo A.}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

doi = "10.1016/j.optmat.2022.113223",

language = "Ingl{\'e}s",

volume = "134",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

Herrera, AM, Ramos, A, García, R, Gastellóu, E, García, G, Carrillo, RC, Santos, I, Brown, F, Mora, R & Hirata, GA 2022, 'Photoluminescence emission in the red band at low temperatures in type-island layers of the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth', Optical Materials, vol. 134, 113223. https://doi.org/10.1016/j.optmat.2022.113223

Photoluminescence emission in the red band at low temperatures in type-island layers of the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth. / Herrera, Ana M.; Ramos, Antonio; García, Rafael et al.
In: Optical Materials, Vol. 134, 113223, 12.2022.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Photoluminescence emission in the red band at low temperatures in type-island layers of the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth

AU - Herrera, Ana M.

AU - Ramos, Antonio

AU - García, Rafael

AU - Gastellóu, Erick

AU - García, Godofredo

AU - Carrillo, Roberto C.

AU - Santos, Irela

AU - Brown, Francisco

AU - Mora, Roberto

AU - Hirata, Gustavo A.

PY - 2022/12

Y1 - 2022/12

N2 - Type-island layers for the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure were grown on GaAs substrates at 600 °C, via liquid phase epitaxy with a growth rate of 0.5 °C/min for 4 min. Air leaks, as well as severe temperature gradients across the graphite sliding boat, were related to the discontinuous growth (type-island). On the other hand, the mechanism of Stranski-Krastanov growth was used to describe the growth of the type-island layers. High-resolution x-ray diffraction showed a minimal lattice mismatch between layers and substrate with a value of 0.0371%. Scanning electron microscopy showed a type-island rectangular shape with a size of 2.059 μm in width and 3.586 μm in large, with an average thickness of 291 nm. Photoluminescence studies at low temperature and room temperature demonstrated energy emission located in the red band at 1.76 eV (703 nm), which was related to free-to-bound and donor-acceptor transitions. I–V measurements for the Al0.32Ga0.68As/Al0.29Ga0.71As/GaAs structure showed the typical curve for light emitting diode, with a threshold voltage of 0.429 V.

AB - Type-island layers for the Al0.32Ga0.68 As/Al0.29Ga0.71As/GaAs structure were grown on GaAs substrates at 600 °C, via liquid phase epitaxy with a growth rate of 0.5 °C/min for 4 min. Air leaks, as well as severe temperature gradients across the graphite sliding boat, were related to the discontinuous growth (type-island). On the other hand, the mechanism of Stranski-Krastanov growth was used to describe the growth of the type-island layers. High-resolution x-ray diffraction showed a minimal lattice mismatch between layers and substrate with a value of 0.0371%. Scanning electron microscopy showed a type-island rectangular shape with a size of 2.059 μm in width and 3.586 μm in large, with an average thickness of 291 nm. Photoluminescence studies at low temperature and room temperature demonstrated energy emission located in the red band at 1.76 eV (703 nm), which was related to free-to-bound and donor-acceptor transitions. I–V measurements for the Al0.32Ga0.68As/Al0.29Ga0.71As/GaAs structure showed the typical curve for light emitting diode, with a threshold voltage of 0.429 V.

KW - GaAs

KW - LPE

KW - Photoluminescence (PL)

KW - Semiconductor compounds

KW - Type-island growth

UR - http://www.scopus.com/inward/record.url?scp=85142189755&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2022.113223

DO - 10.1016/j.optmat.2022.113223

M3 - Artículo

AN - SCOPUS:85142189755

SN - 0925-3467

VL - 134

JO - Optical Materials

JF - Optical Materials

M1 - 113223

ER -

Herrera AM, Ramos A, García R, Gastellóu E, García G, Carrillo RC et al. Photoluminescence emission in the red band at low temperatures in type-island layers of the Al_0.32Ga_0.68 As/Al_0.29Ga_0.71As/GaAs structure obtained via liquid phase epitaxy, and its description by the mechanism of Stranski-Krastanov growth. Optical Materials. 2022 Dec;134:113223. doi: 10.1016/j.optmat.2022.113223