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Photoluminescence enhancement from GaN by beryllium doping
R. García-Gutiérrez
,
A. Ramos-Carrazco
*
,
D. Berman-Mendoza
, G. A. Hirata
, O. E. Contreras
,
M. Barboza-Flores
*
Corresponding author for this work
Departamento de Investigación en Física
Diseño y fabricación de dispositivos electrónicos
Bio espectroscopías e imagenologías en nanoplataformas médicas
Research output
:
Contribution to journal
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Article
›
peer-review
9
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Keyphrases
Ammonia
66%
Beryllium
66%
Beryllium Doping
100%
Cathodoluminescence
33%
Crystalline Phase
33%
Dilute Alloys
33%
Donor-acceptor Pair
33%
Donor-acceptor Pair Transitions
33%
Gallium
33%
GaN Powder
100%
High Purity
33%
High-resolution Transmission Electron Microscopy (HRTEM)
33%
Hollow Columns
33%
Low Temperature
66%
Low Temperature Treatment
33%
Main Peak
33%
Particle Size Distribution
33%
Phonon Replicas
33%
Photoluminescence Enhancement
100%
Photoluminescence Spectra
33%
Platelets
33%
Preferential Growth
33%
Quartz Tube
33%
Reaction Efficiency
33%
Room Temperature
33%
Room-temperature Photoluminescence
33%
Shoulder Peak
33%
Surface Donors
33%
TEM Microscopy
33%
Thermoluminescence Glow Curve
33%
Trap Level
33%
Tube Reactor
33%
Two-particle
33%
Ultra-high Purity
33%
Ultraviolet Band
33%
X Ray Diffraction
33%
Yellow Emission
33%
Yellow Luminescence
33%
Material Science
Beryllium
100%
Cathodoluminescence
25%
Gallium
25%
Luminescence
25%
Particle Size Analysis
25%
Photoluminescence
100%
Platelet
25%
Surface (Surface Science)
25%
Thermoluminescence
25%
Transmission Electron Microscopy
25%
X-Ray Diffraction
25%