Photoluminescence in nanostructured alpha-silicon nitride coatings (α-Si<inf>3</inf>N<inf>4</inf>)

E. B. Acosta-Entriquez, R. C. Carrillo-Torres, M. C. Acosta Enriquez, R. Castillo Ortega, M. A.E. Zayas, S. J. Castillo, M. I. Pech-Canul

Research output: Contribution to journalArticlepeer-review


© 2017, Johns Hopkins University Press. All rights reserved. In this work α-Si3N4coatings grown by hybrid chemical vapor deposition system (HYSY-CVD) are presented. Two different morphologies, pores and fibers, were obtained using two different flows, 45 ml/min (flow 1) and 60 ml/min (flow 2) over a period of 120 min, of nitrogen:ammonia gas mixture (95%:5%). This coatings presents nanocrystals of 20 nm and 36 nm for 1 and 2 flows, respectively, this parameters were obtained by Debye-Scherer formulation. Band gaps of 1.95eV for flow 1 and 1.90 eV for flow 2 were derived from UV-Vis reflectance. The Photoluminescence spectra reveal emissions at 477 nm for flow 1 and 470 nm for flow 2.
Original languageAmerican English
Pages (from-to)111-117
Number of pages7
JournalDigest Journal of Nanomaterials and Biostructures
StatePublished - 1 Jan 2017


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