Platinum to kill lifetime in power diode design

A. Rojas-Hernandez*, J. Swart, W. Marzano, A. Garcia-Juarez

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


An ultrafast power diode is designed and simulated aiming a simple and low cost fabrication process. It is limited to use not implantation process and to use a deep diffusion. The main parameters to fabricate this structure were studied using SRH and Auger recombination models for the lifetime, Crowell model for impact and high injection current considerations to lifetime. The lifetime reduction was performed by adjusting the parameters of capture cross section and density and Energy-level position of platinum. A breakdown voltage of more than 600 V and reverse recovery times less than 35 ns were obtained for a p+nn+ structure, with an epilayer of 50 μm thickness and doping of 2 to 3 × 1014 cm-3.

Original languageEnglish
Title of host publicationMicroelectronics Technology and Devices, SBMicro 2011
PublisherElectrochemical Society Inc.
Number of pages8
ISBN (Electronic)9781607682530
ISBN (Print)9781566779005
StatePublished - 2011
Event26th Symposium on Microelectronics Technology and Devices, SBMicro2011 - Joao Pessoa, Brazil
Duration: 30 Aug 20112 Sep 2011

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Conference26th Symposium on Microelectronics Technology and Devices, SBMicro2011
CityJoao Pessoa


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