An ultrafast power diode is designed and simulated aiming a simple and low cost fabrication process. It is limited to use not implantation process and to use a deep diffusion. The main parameters to fabricate this structure were studied using SRH and Auger recombination models for the lifetime, Crowell model for impact and high injection current considerations to lifetime. The lifetime reduction was performed by adjusting the parameters of capture cross section and density and Energy-level position of platinum. A breakdown voltage of more than 600 V and reverse recovery times less than 35 ns were obtained for a p+nn+ structure, with an epilayer of 50 μm thickness and doping of 2 to 3 × 1014 cm-3.