PMMA-SiO<inf>2</inf>hybrid films as gate dielectric for ZnO based thin-film transistors

M. D. Morales-Acosta, M. A. Quevedo-López, R. Ramírez-Bon

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	380-388
Number of pages	9
Journal	Materials Chemistry and Physics
DOIs	https://doi.org/10.1016/j.matchemphys.2014.03.042
State	Published - 14 Aug 2014
Externally published	Yes

Access to Document

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title = "PMMA-SiO2hybrid films as gate dielectric for ZnO based thin-film transistors",

author = "Morales-Acosta, {M. D.} and Quevedo-L{\'o}pez, {M. A.} and R. Ram{\'i}rez-Bon",

year = "2014",

month = aug,

day = "14",

doi = "10.1016/j.matchemphys.2014.03.042",

language = "American English",

pages = "380--388",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - PMMA-SiO2hybrid films as gate dielectric for ZnO based thin-film transistors

AU - Morales-Acosta, M. D.

AU - Quevedo-López, M. A.

AU - Ramírez-Bon, R.

PY - 2014/8/14

Y1 - 2014/8/14

U2 - 10.1016/j.matchemphys.2014.03.042

DO - 10.1016/j.matchemphys.2014.03.042

M3 - Article

SP - 380

EP - 388

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

ER -