Positive Bias Instability in ZnO TFTs with Al<inf>2</inf>O<inf>3</inf> Gate Dielectric

Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young

Research output: Contribution to conferencePaper

Original languageAmerican English
DOIs
StatePublished - 22 May 2019
Externally publishedYes
EventIEEE International Reliability Physics Symposium Proceedings -
Duration: 22 May 2019 → …

Conference

ConferenceIEEE International Reliability Physics Symposium Proceedings
Period22/05/19 → …

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    Bolshakov, P., Rodriguez-Davila, R. A., Quevedo-Lopez, M., & Young, C. D. (2019). Positive Bias Instability in ZnO TFTs with Al<inf>2</inf>O<inf>3</inf> Gate Dielectric. Paper presented at IEEE International Reliability Physics Symposium Proceedings, . https://doi.org/10.1109/IRPS.2019.8720547