Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric

Pavel Bolshakov; Rodolfo A. Rodriguez-Davila; Manuel Quevedo-Lopez; Chadwin D. Young

doi:10.1109/IRPS.2019.8720547

Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric

Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young

Departamento de Investigación en Polímeros y Materiales

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al₂O₃deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔV_T compared to the 250°C samples. The 250°C samples show consistent ΔV_T, suggesting a higher Al₂O₃deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δg_m and ASS -suggesting little to no influence on the V_T shift by interfacial state generation.

Original language	English
Title of host publication	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538695043
DOIs	https://doi.org/10.1109/IRPS.2019.8720547
State	Published - 22 May 2019
Event	2019 IEEE International Reliability Physics Symposium, IRPS 2019 - Monterey, United States Duration: 31 Mar 2019 → 4 Apr 2019

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2019-March
ISSN (Print)	1541-7026

Conference

Conference	2019 IEEE International Reliability Physics Symposium, IRPS 2019
Country/Territory	United States
City	Monterey
Period	31/03/19 → 4/04/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Keywords

Al2O3
PBI
TFTs
VT
ZnO

Access to Document

10.1109/IRPS.2019.8720547

Cite this

Bolshakov, P., Rodriguez-Davila, R. A., Quevedo-Lopez, M., & Young, C. D. (2019). Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. In 2019 IEEE International Reliability Physics Symposium, IRPS 2019 Article 8720547 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2019.8720547

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title = "Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric",

abstract = "Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al2O3deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔVT compared to the 250°C samples. The 250°C samples show consistent ΔVT, suggesting a higher Al2O3deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δgm and ASS -suggesting little to no influence on the VT shift by interfacial state generation.",

keywords = "Al2O3, PBI, TFTs, VT, ZnO",

author = "Pavel Bolshakov and Rodriguez-Davila, {Rodolfo A.} and Manuel Quevedo-Lopez and Young, {Chadwin D.}",

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Bolshakov, P, Rodriguez-Davila, RA, Quevedo-Lopez, M & Young, CD 2019, Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. in 2019 IEEE International Reliability Physics Symposium, IRPS 2019., 8720547, IEEE International Reliability Physics Symposium Proceedings, vol. 2019-March, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, United States, 31/03/19. https://doi.org/10.1109/IRPS.2019.8720547

Positive Bias Instability in ZnO TFTs with Al₂O₃ Gate Dielectric. / Bolshakov, Pavel; Rodriguez-Davila, Rodolfo A.; Quevedo-Lopez, Manuel et al.
2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8720547 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Positive bias instability stress (PBI) was done on ZnO thin-film transistors (TFTs) with Al2O3deposition at 100°C and 250°C. The threshold voltage (VT), transconductance (gm), and subthreshold slope (SS) were monitored where the 100°C samples demonstrated a 'turn-around' phenomenon in the ΔVT compared to the 250°C samples. The 250°C samples show consistent ΔVT, suggesting a higher Al2O3deposition temperature results in the absence of the defect responsible for the 'turn-around' effect. Both sets also demonstrate negligible degradation in Δgm and ASS -suggesting little to no influence on the VT shift by interfacial state generation.

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