Pressure-Induced YbFe2O4-Type to Spinel Structural Change of InGaMgO4

Takehiro Koike, Hena Das*, Kengo Oka, Yoshihiro Kusano, Fernando Cubillas, Francisco Brown Bojorqez, Victor Emmanuel Alvarez-Montano, Shigekazu Ito, Kei Shigematsu, Hayato Togano, Ikuya Yamada, Hiroki Ishibashi, Yoshiki Kubota, Shigeo Mori, Noboru Kimizuka, Masaki Azuma*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Spinel-type InGaMgO4 with a = 8.56615(3) Å was prepared by treating layered YbFe2O4-type InGaMgO4 at 6 GPa and 1473 K. DFT calculation and Rietveld analysis of synchrotron X-ray powder diffraction data revealed the inverse spinel structure with In3+:Ga3+/Mg2+ = 0.726:0.274 in the tetrahedral site and 0.137:0.863 in the octahedral site. InGaMgO4 spinel is an insulator with an experimental band gap of 2.80 eV, and the attempt at hole doping by post-annealing in a reducing atmosphere to introduce an oxygen defect was unsuccessful. This is the first report of the bulk synthesis of AB2O4 compounds with both YbFe2O4 and spinel polymorphs.

Original languageEnglish
Pages (from-to)422-433
Number of pages12
JournalSolids
Volume5
Issue number3
DOIs
StatePublished - Sep 2024

Bibliographical note

Publisher Copyright:
© 2024 by the authors.

Keywords

  • YbFeO-type structure
  • high-pressure synthesis
  • phase transition
  • spinel structure

Cite this