Relationship of HfO<inf>2</inf> material properties and transistor performance

P. D. Kirsch; M. A. Quevedo; G. Pant; S. Krishnan; S. C. Song; H. J. Li; J. J. Peterson; B. H. Lee; R. W. Wallace; M. Kim; B. E. Gnade

doi:10.1109/VTSA.2006.251090

Relationship of HfO<inf>2</inf> material properties and transistor performance

P. D. Kirsch, M. A. Quevedo, G. Pant, S. Krishnan, S. C. Song, H. J. Li, J. J. Peterson, B. H. Lee, R. W. Wallace, M. Kim, B. E. Gnade

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to conference › Paper

2 Scopus citations

Original language	American English
Pages	113-114
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2006.251090
State	Published - 1 Dec 2006
Event	International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Duration: 27 Sep 2007 → …

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Conference	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Period	27/09/07 → …

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10.1109/VTSA.2006.251090

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Kirsch, P. D., Quevedo, M. A., Pant, G., Krishnan, S., Song, S. C., Li, H. J., Peterson, J. J., Lee, B. H., Wallace, R. W., Kim, M., & Gnade, B. E. (2006). Relationship of HfO<inf>2</inf> material properties and transistor performance. 113-114. Paper presented at International Symposium on VLSI Technology, Systems, and Applications, Proceedings. https://doi.org/10.1109/VTSA.2006.251090

@conference{ddda261a083b4cd7a683ea1bb1446d07,

title = "Relationship of HfO2 material properties and transistor performance",

author = "Kirsch, {P. D.} and Quevedo, {M. A.} and G. Pant and S. Krishnan and Song, {S. C.} and Li, {H. J.} and Peterson, {J. J.} and Lee, {B. H.} and Wallace, {R. W.} and M. Kim and Gnade, {B. E.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/VTSA.2006.251090",

language = "American English",

pages = "113--114",

note = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings ; Conference date: 27-09-2007",

}

Kirsch, PD, Quevedo, MA, Pant, G, Krishnan, S, Song, SC, Li, HJ, Peterson, JJ, Lee, BH, Wallace, RW, Kim, M & Gnade, BE 2006, 'Relationship of HfO<inf>2</inf> material properties and transistor performance', Paper presented at International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 27/09/07 pp. 113-114. https://doi.org/10.1109/VTSA.2006.251090

Relationship of HfO<inf>2</inf> material properties and transistor performance. / Kirsch, P. D.; Quevedo, M. A.; Pant, G.; Krishnan, S.; Song, S. C.; Li, H. J.; Peterson, J. J.; Lee, B. H.; Wallace, R. W.; Kim, M.; Gnade, B. E.

2006. 113-114 Paper presented at International Symposium on VLSI Technology, Systems, and Applications, Proceedings.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Relationship of HfO2 material properties and transistor performance

AU - Kirsch, P. D.

AU - Quevedo, M. A.

AU - Pant, G.

AU - Krishnan, S.

AU - Song, S. C.

AU - Li, H. J.

AU - Peterson, J. J.

AU - Lee, B. H.

AU - Wallace, R. W.

AU - Kim, M.

AU - Gnade, B. E.

PY - 2006/12/1

Y1 - 2006/12/1

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=34250380682&origin=inward

UR - https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=34250380682&origin=inward

U2 - 10.1109/VTSA.2006.251090

DO - 10.1109/VTSA.2006.251090

M3 - Paper

SP - 113

EP - 114

T2 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Y2 - 27 September 2007

ER -

Relationship of HfO<inf>2</inf> material properties and transistor performance

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