RF power effect on the properties of sputtered ZnO films for channel layer applications in thin-film transistors

M. I. Medina-Montes, H. Arizpe-Chávez, L. A. Baldenegro-Pérez, M. A. Quevedo-López, R. Ramírez-Bon

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Original language	American English
Pages (from-to)	1962-1969
Number of pages	8
Journal	Journal of Electronic Materials
DOIs	https://doi.org/10.1007/s11664-012-1994-9
State	Published - 1 Jul 2012

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@article{7895779b6b5b47e4aa9c83fb883e1723,

title = "RF power effect on the properties of sputtered ZnO films for channel layer applications in thin-film transistors",

author = "Medina-Montes, {M. I.} and H. Arizpe-Ch{\'a}vez and Baldenegro-P{\'e}rez, {L. A.} and Quevedo-L{\'o}pez, {M. A.} and R. Ram{\'i}rez-Bon",

year = "2012",

month = jul,

day = "1",

doi = "10.1007/s11664-012-1994-9",

language = "American English",

pages = "1962--1969",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

}

TY - JOUR

T1 - RF power effect on the properties of sputtered ZnO films for channel layer applications in thin-film transistors

AU - Medina-Montes, M. I.

AU - Arizpe-Chávez, H.

AU - Baldenegro-Pérez, L. A.

AU - Quevedo-López, M. A.

AU - Ramírez-Bon, R.

PY - 2012/7/1

Y1 - 2012/7/1

U2 - 10.1007/s11664-012-1994-9

DO - 10.1007/s11664-012-1994-9

M3 - Article

SP - 1962

EP - 1969

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

ER -