Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Sangchul Lee, Omokhodion David Iyore, Saungeun Park, Young Gon Lee, Srikar Jandhyala, Chang Goo Kang, Greg Mordi, Yonghun Kim, Manuel Quevedo-Lopez, Bruce E. Gnade, Robert M. Wallace, Byoung Hun Lee*, Jiyoung Kim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm2/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.

Original languageEnglish
Pages (from-to)791-797
Number of pages7
JournalCarbon
Volume68
DOIs
StatePublished - Mar 2014
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the SWAN-NRI program, the Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the MOSIP, and Inter-ER Cooperation Projects funded by the MKE and KIAT.

Fingerprint

Dive into the research topics of 'Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate'. Together they form a unique fingerprint.

Cite this