Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Sangchul Lee; Omokhodion David Iyore; Saungeun Park; Young Gon Lee; Srikar Jandhyala; Chang Goo Kang; Greg Mordi; Yonghun Kim; Manuel Quevedo-Lopez; Bruce E. Gnade; Robert M. Wallace; Byoung Hun Lee; Jiyoung Kim

doi:10.1016/j.carbon.2013.11.071

Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Sangchul Lee, Omokhodion David Iyore, Saungeun Park, Young Gon Lee, Srikar Jandhyala, Chang Goo Kang, Greg Mordi, Yonghun Kim, Manuel Quevedo-Lopez, Bruce E. Gnade, Robert M. Wallace, Byoung Hun Lee^*, Jiyoung Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm²/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.

Original language	English
Pages (from-to)	791-797
Number of pages	7
Journal	Carbon
Volume	68
DOIs	https://doi.org/10.1016/j.carbon.2013.11.071
State	Published - Mar 2014
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the SWAN-NRI program, the Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the MOSIP, and Inter-ER Cooperation Projects funded by the MKE and KIAT.

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10.1016/j.carbon.2013.11.071

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title = "Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate",

abstract = "The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm2/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.",

author = "Sangchul Lee and Iyore, {Omokhodion David} and Saungeun Park and Lee, {Young Gon} and Srikar Jandhyala and Kang, {Chang Goo} and Greg Mordi and Yonghun Kim and Manuel Quevedo-Lopez and Gnade, {Bruce E.} and Wallace, {Robert M.} and Lee, {Byoung Hun} and Jiyoung Kim",

note = "Funding Information: This work was supported by the SWAN-NRI program, the Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the MOSIP, and Inter-ER Cooperation Projects funded by the MKE and KIAT. ",

year = "2014",

month = mar,

doi = "10.1016/j.carbon.2013.11.071",

language = "Ingl{\'e}s",

volume = "68",

pages = "791--797",

journal = "Carbon",

issn = "0008-6223",

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TY - JOUR

T1 - Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

AU - Lee, Sangchul

AU - Iyore, Omokhodion David

AU - Park, Saungeun

AU - Lee, Young Gon

AU - Jandhyala, Srikar

AU - Kang, Chang Goo

AU - Mordi, Greg

AU - Kim, Yonghun

AU - Quevedo-Lopez, Manuel

AU - Gnade, Bruce E.

AU - Wallace, Robert M.

AU - Lee, Byoung Hun

AU - Kim, Jiyoung

N1 - Funding Information: This work was supported by the SWAN-NRI program, the Global Frontier R&D Program (2013-073298) on Center for Hybrid Interface Materials (HIM) funded by the MOSIP, and Inter-ER Cooperation Projects funded by the MKE and KIAT.

PY - 2014/3

Y1 - 2014/3

N2 - The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm2/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.

AB - The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ∼12980 and hole mobility ∼9214 cm2/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.

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U2 - 10.1016/j.carbon.2013.11.071

DO - 10.1016/j.carbon.2013.11.071

M3 - Artículo

SN - 0008-6223

VL - 68

SP - 791

EP - 797

JO - Carbon

JF - Carbon

ER -

Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate

Abstract

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