Role of complexing agents in chemical bath deposition of lead sulfide thin films

A. Carrillo-Castillo*, R. C. Ambrosio Lázaro, A. Jimenez-Pérez, C. A. Martínez Pérez, E. C. De La Cruz Terrazas, M. A. Quevedo-López

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Lead sulfide semiconductor thin films have been deposited by the chemical bath technique at a low temperature (43 C) on glass substrate. The effect of complexing agents as hydrazine and hydrazine-ammonia was studied to determine the optimum conditions for depositions. The thin films obtained were structurally and electrically characterized. Hydrazine and ammonia-hydrazine as complexing agents reduce the deposition rate due to higher complexation and slow generation of Pb2+ improving the morphology of PbS thin films. Homogeneous PbS thin films with cubic crystalline structure were obtained after the deposition process. The deposited thin films showed an ohmic behavior in the metal-semiconductor interface with resistivity values in the order from 0.4 to 65 Ω cm which is very promising to integrate the material in the fabrication of electronic devices.

Original languageEnglish
Pages (from-to)19-21
Number of pages3
JournalMaterials Letters
StatePublished - 15 Apr 2014

Bibliographical note

Funding Information:
The authors acknowledge partial financial support from CONACyT through the grants Fondo Institucional de Fomento Regional para el Desarrollo Científico , Tecnológico y de Innovación FORDECYT-2011-01.


  • Chemical bath deposition
  • Complexing agent
  • Lead sulfide


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