Role of complexing agents in chemical bath deposition of lead sulfide thin films

A. Carrillo-Castillo; R. C. Ambrosio Lázaro; A. Jimenez-Pérez; C. A. Martínez Pérez; E. C. De La Cruz Terrazas; M. A. Quevedo-López

doi:10.1016/j.matlet.2014.01.088

Role of complexing agents in chemical bath deposition of lead sulfide thin films

A. Carrillo-Castillo^*, R. C. Ambrosio Lázaro, A. Jimenez-Pérez, C. A. Martínez Pérez, E. C. De La Cruz Terrazas, M. A. Quevedo-López

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Lead sulfide semiconductor thin films have been deposited by the chemical bath technique at a low temperature (43 C) on glass substrate. The effect of complexing agents as hydrazine and hydrazine-ammonia was studied to determine the optimum conditions for depositions. The thin films obtained were structurally and electrically characterized. Hydrazine and ammonia-hydrazine as complexing agents reduce the deposition rate due to higher complexation and slow generation of Pb²⁺ improving the morphology of PbS thin films. Homogeneous PbS thin films with cubic crystalline structure were obtained after the deposition process. The deposited thin films showed an ohmic behavior in the metal-semiconductor interface with resistivity values in the order from 0.4 to 65 Ω cm which is very promising to integrate the material in the fabrication of electronic devices.

Original language	English
Pages (from-to)	19-21
Number of pages	3
Journal	Materials Letters
Volume	121
DOIs	https://doi.org/10.1016/j.matlet.2014.01.088
State	Published - 15 Apr 2014

Bibliographical note

Funding Information:
The authors acknowledge partial financial support from CONACyT through the grants Fondo Institucional de Fomento Regional para el Desarrollo Científico , Tecnológico y de Innovación FORDECYT-2011-01.

Keywords

Chemical bath deposition
Complexing agent
Lead sulfide

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10.1016/j.matlet.2014.01.088

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title = "Role of complexing agents in chemical bath deposition of lead sulfide thin films",

abstract = "Lead sulfide semiconductor thin films have been deposited by the chemical bath technique at a low temperature (43 C) on glass substrate. The effect of complexing agents as hydrazine and hydrazine-ammonia was studied to determine the optimum conditions for depositions. The thin films obtained were structurally and electrically characterized. Hydrazine and ammonia-hydrazine as complexing agents reduce the deposition rate due to higher complexation and slow generation of Pb2+ improving the morphology of PbS thin films. Homogeneous PbS thin films with cubic crystalline structure were obtained after the deposition process. The deposited thin films showed an ohmic behavior in the metal-semiconductor interface with resistivity values in the order from 0.4 to 65 Ω cm which is very promising to integrate the material in the fabrication of electronic devices.",

keywords = "Chemical bath deposition, Complexing agent, Lead sulfide",

author = "A. Carrillo-Castillo and {Ambrosio L{\'a}zaro}, {R. C.} and A. Jimenez-P{\'e}rez and {Mart{\'i}nez P{\'e}rez}, {C. A.} and {De La Cruz Terrazas}, {E. C.} and Quevedo-L{\'o}pez, {M. A.}",

note = "Funding Information: The authors acknowledge partial financial support from CONACyT through the grants Fondo Institucional de Fomento Regional para el Desarrollo Cient{\'i}fico , Tecnol{\'o}gico y de Innovaci{\'o}n FORDECYT-2011-01.",

year = "2014",

month = apr,

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doi = "10.1016/j.matlet.2014.01.088",

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pages = "19--21",

journal = "Materials Letters",

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T1 - Role of complexing agents in chemical bath deposition of lead sulfide thin films

AU - Carrillo-Castillo, A.

AU - Ambrosio Lázaro, R. C.

AU - Jimenez-Pérez, A.

AU - Martínez Pérez, C. A.

AU - De La Cruz Terrazas, E. C.

AU - Quevedo-López, M. A.

N1 - Funding Information: The authors acknowledge partial financial support from CONACyT through the grants Fondo Institucional de Fomento Regional para el Desarrollo Científico , Tecnológico y de Innovación FORDECYT-2011-01.

PY - 2014/4/15

Y1 - 2014/4/15

N2 - Lead sulfide semiconductor thin films have been deposited by the chemical bath technique at a low temperature (43 C) on glass substrate. The effect of complexing agents as hydrazine and hydrazine-ammonia was studied to determine the optimum conditions for depositions. The thin films obtained were structurally and electrically characterized. Hydrazine and ammonia-hydrazine as complexing agents reduce the deposition rate due to higher complexation and slow generation of Pb2+ improving the morphology of PbS thin films. Homogeneous PbS thin films with cubic crystalline structure were obtained after the deposition process. The deposited thin films showed an ohmic behavior in the metal-semiconductor interface with resistivity values in the order from 0.4 to 65 Ω cm which is very promising to integrate the material in the fabrication of electronic devices.

AB - Lead sulfide semiconductor thin films have been deposited by the chemical bath technique at a low temperature (43 C) on glass substrate. The effect of complexing agents as hydrazine and hydrazine-ammonia was studied to determine the optimum conditions for depositions. The thin films obtained were structurally and electrically characterized. Hydrazine and ammonia-hydrazine as complexing agents reduce the deposition rate due to higher complexation and slow generation of Pb2+ improving the morphology of PbS thin films. Homogeneous PbS thin films with cubic crystalline structure were obtained after the deposition process. The deposited thin films showed an ohmic behavior in the metal-semiconductor interface with resistivity values in the order from 0.4 to 65 Ω cm which is very promising to integrate the material in the fabrication of electronic devices.

KW - Chemical bath deposition

KW - Complexing agent

KW - Lead sulfide

UR - http://www.scopus.com/inward/record.url?scp=84893959679&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.01.088

DO - 10.1016/j.matlet.2014.01.088

M3 - Artículo

SN - 0167-577X

VL - 121

SP - 19

EP - 21

JO - Materials Letters

JF - Materials Letters

ER -

Role of complexing agents in chemical bath deposition of lead sulfide thin films

Abstract

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Keywords

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