TY - JOUR
T1 - Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications
AU - Valenzuela-Hernandez, Gerardo
AU - Rangel, Ricardo
AU - García, Rafael
AU - Piza, Pedro
AU - Torres-Figueroa, Ana V.
AU - Contreras, Oscar
AU - Carrillo-Torres, Roberto C.
AU - Quintana, Patricia
AU - Cedeño, Veronica
AU - Ramos, Antonio
AU - Berman-Mendoza, Dainet
N1 - Publisher Copyright:
© 2023 The Authors. Published by American Chemical Society.
PY - 2023/11/28
Y1 - 2023/11/28
N2 - In this report, the results of gallium nitride (GaN) crystal growth on a silicon substrate covered by gold nanoparticles (AuNPs) are described using the chemical vapor deposition (CVD) technique. The formation of AuNPs by solid-state dewetting and a preferential crystallization of GaN species on the gold nucleation centers were demonstrated. The migration and embedding of gold centers during the ripening of GaN structures were evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Embedded AuNPs endowed the structural and optical properties of a semiconductor, related to the particle size, GaN crystallite, and plasmon-exciton interactions. Photoluminescence (PL) and UV-vis spectroscopy revealed a reduction in the intensity of the near band emission (NBE) at 3.4 eV in the gold-nucleated film in addition to a broadening of the absorption band edge. An increase in the density current of 0.046-0.142 mA/cm2 in a gold-nucleated GaN-based p-n junction was obtained, attributed to the localized surface plasmon resonance (LSPR) effects of the embedded AuNPs. Beyond the advantages of applying group III nitrides in the electronic field, appropriate modification of the preparation method of these materials with metallic covered substrates could provide them with specific properties, according to a targeted application.
AB - In this report, the results of gallium nitride (GaN) crystal growth on a silicon substrate covered by gold nanoparticles (AuNPs) are described using the chemical vapor deposition (CVD) technique. The formation of AuNPs by solid-state dewetting and a preferential crystallization of GaN species on the gold nucleation centers were demonstrated. The migration and embedding of gold centers during the ripening of GaN structures were evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Embedded AuNPs endowed the structural and optical properties of a semiconductor, related to the particle size, GaN crystallite, and plasmon-exciton interactions. Photoluminescence (PL) and UV-vis spectroscopy revealed a reduction in the intensity of the near band emission (NBE) at 3.4 eV in the gold-nucleated film in addition to a broadening of the absorption band edge. An increase in the density current of 0.046-0.142 mA/cm2 in a gold-nucleated GaN-based p-n junction was obtained, attributed to the localized surface plasmon resonance (LSPR) effects of the embedded AuNPs. Beyond the advantages of applying group III nitrides in the electronic field, appropriate modification of the preparation method of these materials with metallic covered substrates could provide them with specific properties, according to a targeted application.
KW - GaN
KW - LSPR effect
KW - chemical vapor deposition
KW - gold nanoparticles
KW - group III nitrides
KW - plasmon-exciton interactions
KW - plasmonic device
UR - http://www.scopus.com/inward/record.url?scp=85178347903&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.3c01173
DO - 10.1021/acsaelm.3c01173
M3 - Artículo
AN - SCOPUS:85178347903
SN - 2637-6113
VL - 5
SP - 6305
EP - 6314
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 11
ER -