Abstract
An optoelectronic device that detect visible light is designed in silicon technology, peaking in 650 nm wavelength. The quadrant detector (QD) derive photocurrents by projecting a light spot on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm per active area by each quadrant and the size of the device is 9mm2. This work describes a technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity. We propose to integrate sensor into complementary metal-oxide-semiconductor (CMOS) technology in order to improve photodetector out signal, reducing noise generated when photodetector is so far from data acquisition system.
Original language | English |
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Article number | 175 |
Pages (from-to) | 922-925 |
Number of pages | 4 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5622 |
Issue number | PART 2 |
DOIs | |
State | Published - 2004 |
Event | RIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting - Porlamar, Venezuela, Bolivarian Republic of Duration: 3 Oct 2004 → 8 Oct 2004 |
Keywords
- CMOS technology
- Optoelectronic device
- PSD