Silicon quadrant detector in CMOS technology

A. Vera Marquina*, A. Torres Jácome

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


An optoelectronic device that detect visible light is designed in silicon technology, peaking in 650 nm wavelength. The quadrant detector (QD) derive photocurrents by projecting a light spot on four photodiodes placed close to each other on a silicon common substrate. The photodetector is square shaped with 2.25 mm per active area by each quadrant and the size of the device is 9mm2. This work describes a technology to develop position sensitive detectors of four quadrant optimizing geometry to increase sensitivity. We propose to integrate sensor into complementary metal-oxide-semiconductor (CMOS) technology in order to improve photodetector out signal, reducing noise generated when photodetector is so far from data acquisition system.

Original languageEnglish
Article number175
Pages (from-to)922-925
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue numberPART 2
StatePublished - 2004
EventRIAO/OPTILAS 2004: 5th Iberoamerican Meeting on Optics, and 8th Latin American Meeting on Optics, Lasers, and their Applications; ICO Regional Meeting - Porlamar, Venezuela, Bolivarian Republic of
Duration: 3 Oct 20048 Oct 2004


  • CMOS technology
  • Optoelectronic device
  • PSD


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