Simple chemical solution deposition of Al₂O₃ dielectric layers for low-cost fabrication of transparent electronic devices

Engineering & Materials Science

• Aluminum oxide 93%
• Fabrication 72%
• Thin film transistors 41%
• Drain current 41%
• Costs 37%
• Nanopores 24%
• Gate dielectrics 23%
• Zinc oxide 21%
• Metals 20%
• Oxide semiconductors 19%
• Surface morphology 18%
• Threshold voltage 17%
• Leakage currents 17%
• Electric potential 16%
• Characterization (materials science) 14%
• Capacitance 13%
• Capacitors 12%
• Scanning electron microscopy 12%
• Substrates 11%

Chemistry

• Drain Current 100%
• Dielectric Material 85%
• Voltage 70%
• Dendritic Crystal 49%
• Leakage Current 42%
• Capacitor 33%
• Zinc Oxide 31%
• Compound Mobility 24%
• Semiconductor 24%
• Scanning Electron Microscopy 19%
• Time 11%
• Surface 10%
• Application 10%

Physics & Astronomy

• fabrication 58%
• electronics 50%
• transistors 38%
• formulations 33%
• electric potential 26%
• thin films 25%
• metals 24%
• zinc oxides 23%
• threshold voltage 23%
• capacitors 21%
• leakage 20%
• capacitance 19%
• conduction 16%
• scanning electron microscopy 15%
• characterization 13%
• performance 10%