Simplified EKV model parameter extraction in polysilicon MOSFETs

Adelmo Ortiz-Conde; Carlos Ávila-Avendaño; Manuel A. Quevedo-López; Francisco J. García-Sánchez

doi:10.1016/j.sse.2022.108403

Simplified EKV model parameter extraction in polysilicon MOSFETs

Adelmo Ortiz-Conde^*, Carlos Ávila-Avendaño, Manuel A. Quevedo-López, Francisco J. García-Sánchez

^*Corresponding author for this work

Departamento de Investigación en Polímeros y Materiales

Research output: Contribution to journal › Article › peer-review

Abstract

We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.

Original language	English
Article number	108403
Journal	Solid-State Electronics
Volume	195
DOIs	https://doi.org/10.1016/j.sse.2022.108403
State	Published - Sep 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier Ltd

Keywords

Lambert W function
Lateral optimization
MOSFET
Parameter extraction
Simplified EKV model
polysilicon thin-film transistors (TFTs)

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10.1016/j.sse.2022.108403

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title = "Simplified EKV model parameter extraction in polysilicon MOSFETs",

abstract = "We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.",

keywords = "Lambert W function, Lateral optimization, MOSFET, Parameter extraction, Simplified EKV model, polysilicon thin-film transistors (TFTs)",

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year = "2022",

month = sep,

doi = "10.1016/j.sse.2022.108403",

language = "Ingl{\'e}s",

volume = "195",

journal = "Solid-State Electronics",

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T1 - Simplified EKV model parameter extraction in polysilicon MOSFETs

AU - Ortiz-Conde, Adelmo

AU - Ávila-Avendaño, Carlos

AU - Quevedo-López, Manuel A.

AU - García-Sánchez, Francisco J.

PY - 2022/9

Y1 - 2022/9

N2 - We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.

AB - We present an easy but effective method to extract the four parameters of the simplified Enz–Krummenacher–Vittoz (sEKV) MOSFET model. The procedure, which is based on direct lateral optimization, is tested using measurements from experimental polycrystalline silicon Thin Film Transistors (TFTs) of various channel lengths and widths. We demonstrate that this basic MOSFET model is able to reasonably describe the saturation transfer characteristics of these polysilicon TFTs. Furthermore, we evaluate the computational adeptness for extracting the four sEKV parameters of the lateral optimization fitting procedure as compared to the more traditional vertical optimization one.

KW - Lambert W function

KW - Lateral optimization

KW - MOSFET

KW - Parameter extraction

KW - Simplified EKV model

KW - polysilicon thin-film transistors (TFTs)

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U2 - 10.1016/j.sse.2022.108403

DO - 10.1016/j.sse.2022.108403

M3 - Artículo

AN - SCOPUS:85132869015

SN - 0038-1101

VL - 195

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108403

ER -

Simplified EKV model parameter extraction in polysilicon MOSFETs

Abstract

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Keywords

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