Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors

R. A.B. Devine, H. N. Alshareef, M. A. Quevedo-Lopez

Research output: Contribution to journalArticleResearchpeer-review

3 Citations (Scopus)
Original languageAmerican English
JournalJournal of Applied Physics
DOIs
StatePublished - 1 Dec 2008
Externally publishedYes

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charging
field effect transistors
traps
transistors
trapping
threshold voltage
temperature
physics
shift
estimates

Cite this

@article{84267d2b2a164fda8f865a140ecac1f0,
title = "Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors",
author = "Devine, {R. A.B.} and Alshareef, {H. N.} and Quevedo-Lopez, {M. A.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1063/1.3039997",
language = "American English",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",

}

Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors. / Devine, R. A.B.; Alshareef, H. N.; Quevedo-Lopez, M. A.

In: Journal of Applied Physics, 01.12.2008.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors

AU - Devine, R. A.B.

AU - Alshareef, H. N.

AU - Quevedo-Lopez, M. A.

PY - 2008/12/1

Y1 - 2008/12/1

U2 - 10.1063/1.3039997

DO - 10.1063/1.3039997

M3 - Article

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -