Abstract
Polycrystalline In2S3 films were grown on glass substrates by means of the chemical bath method and subsequently thermal-annealed in an Ar atmosphere at temperatures from 200 to 450°C. The optical and structural properties of the films were studied as a function of the annealing temperature. The experimental results show that the as-deposited films are composed by a mixture of both cubic α and β crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal β one and a crystalline reorientation of the latter phase. Two energy band gaps were determined for all the films: one indirect and other direct at higher energy. The structural modifications of the films are accompanied by changes in the two energy band gaps of the films.
Original language | Undefined/Unknown |
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Pages (from-to) | 5-10 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 472 |
Issue number | 1-2 |
DOIs | |
State | Published - 2005 |
Bibliographical note
Funding Information:We acknowledge the helpful technical assistance of J.E. Urbina-Alvárez, M.A. Hernández-Landaverde, and R. Flores-Farı́as. This work was partially supported by CONACyT (project no. 34514-U).
Keywords
- Chalcogenides
- Chalcogens
- Chemical deposition
- Deposition process
- Indium sulfide
- Optical properties
- Structural properties
- Structural transition
- Thermal annealing
- Thin films