Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

S. J. Castillo; A. Mendoza-Galván; R. Ramírez-Bon; F. J. Espinoza-Beltrán; M. Sotelo-Lerma; J. González-Hernández; G. Martínez

doi:10.1016/S0040-6090(00)01080-4

Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

S. J. Castillo^*, A. Mendoza-Galván, R. Ramírez-Bon, F. J. Espinoza-Beltrán, M. Sotelo-Lerma, J. González-Hernández, G. Martínez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 °C) samples were evaluated. Heat treatments promote the formation of an external In₂O₃ layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10^-1-10^-2 Ω/cm were obtained after annealing the In/CdS/glass system at 350 and 400 °C. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In₂O₃/In/CdS/glass structure previously proposed.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	Thin Solid Films
Volume	373
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01080-4
State	Published - 3 Sep 2000

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Funding Information:
This work was partially supported by CONACyT.

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title = "Structural, optical and electrical characterization of In/CdS/glass thermally annealed system",

abstract = "Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 °C) samples were evaluated. Heat treatments promote the formation of an external In2O3 layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10-1-10-2 Ω/cm were obtained after annealing the In/CdS/glass system at 350 and 400 °C. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously proposed.",

author = "Castillo, {S. J.} and A. Mendoza-Galv{\'a}n and R. Ram{\'i}rez-Bon and Espinoza-Beltr{\'a}n, {F. J.} and M. Sotelo-Lerma and J. Gonz{\'a}lez-Hern{\'a}ndez and G. Mart{\'i}nez",

note = "Funding Information: This work was partially supported by CONACyT.",

year = "2000",

month = sep,

day = "3",

doi = "10.1016/S0040-6090(00)01080-4",

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T1 - Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

AU - Castillo, S. J.

AU - Mendoza-Galván, A.

AU - Ramírez-Bon, R.

AU - Espinoza-Beltrán, F. J.

AU - Sotelo-Lerma, M.

AU - González-Hernández, J.

AU - Martínez, G.

N1 - Funding Information: This work was partially supported by CONACyT.

PY - 2000/9/3

Y1 - 2000/9/3

N2 - Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 °C) samples were evaluated. Heat treatments promote the formation of an external In2O3 layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10-1-10-2 Ω/cm were obtained after annealing the In/CdS/glass system at 350 and 400 °C. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously proposed.

AB - Chemical bath deposited CdS thin films coated with an evaporated indium thin film were analyzed by electrical, optical absorption, spectroscopic ellipsometry, X-ray and AFM measurements. As-deposited and thermally annealed (250-400 °C) samples were evaluated. Heat treatments promote the formation of an external In2O3 layer, as revealed by X-ray data. Indium atoms diffuse to the CdS layer from an intermediate indium layer. CdS doped with In with resistivities of approximately 10-1-10-2 Ω/cm were obtained after annealing the In/CdS/glass system at 350 and 400 °C. From the ellipsometry spectra, the evolution of the initial two-layer structure, In/CdS/glass, with thermal annealing was investigated. The analysis shows a more complex structure than the In2O3/In/CdS/glass structure previously proposed.

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U2 - 10.1016/S0040-6090(00)01080-4

DO - 10.1016/S0040-6090(00)01080-4

M3 - Artículo

SN - 0040-6090

VL - 373

SP - 10

EP - 14

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Structural, optical and electrical characterization of In/CdS/glass thermally annealed system

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