Structure and refractive index of thin alumina films grown by atomic layer deposition

M. Tulio Aguilar-Gama, Erik Ramírez-Morales, Z. Montiel-González, A. Mendoza-Galván, Mérida Sotelo-Lerma, P. K. Nair, Hailin Hu

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)
Original languageAmerican English
Pages (from-to)5546-5552
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
DOIs
StatePublished - 23 Aug 2015

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Atomic layer deposition
Aluminum Oxide
atomic layer epitaxy
Refractive index
Alumina
aluminum oxides
Spectroscopic ellipsometry
refractivity
ellipsometry
cycles
Purging
homogeneity
Ultrathin films
Surface reactions
Silicon
Amorphous films
purging
Optoelectronic devices
Film thickness
Nitrogen

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Aguilar-Gama, M. T., Ramírez-Morales, E., Montiel-González, Z., Mendoza-Galván, A., Sotelo-Lerma, M., Nair, P. K., & Hu, H. (2015). Structure and refractive index of thin alumina films grown by atomic layer deposition. Journal of Materials Science: Materials in Electronics, 5546-5552. https://doi.org/10.1007/s10854-014-2111-z
Aguilar-Gama, M. Tulio ; Ramírez-Morales, Erik ; Montiel-González, Z. ; Mendoza-Galván, A. ; Sotelo-Lerma, Mérida ; Nair, P. K. ; Hu, Hailin. / Structure and refractive index of thin alumina films grown by atomic layer deposition. In: Journal of Materials Science: Materials in Electronics. 2015 ; pp. 5546-5552.
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Structure and refractive index of thin alumina films grown by atomic layer deposition. / Aguilar-Gama, M. Tulio; Ramírez-Morales, Erik; Montiel-González, Z.; Mendoza-Galván, A.; Sotelo-Lerma, Mérida; Nair, P. K.; Hu, Hailin.

In: Journal of Materials Science: Materials in Electronics, 23.08.2015, p. 5546-5552.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Structure and refractive index of thin alumina films grown by atomic layer deposition

AU - Aguilar-Gama, M. Tulio

AU - Ramírez-Morales, Erik

AU - Montiel-González, Z.

AU - Mendoza-Galván, A.

AU - Sotelo-Lerma, Mérida

AU - Nair, P. K.

AU - Hu, Hailin

PY - 2015/8/23

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DO - 10.1007/s10854-014-2111-z

M3 - Article

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EP - 5552

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

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