Abstract
This work is focused on a systematic study of homogeneous growth of copper sulfide (CuS) thin films deposited under similar chemical deposition conditions and considering the variations of the number of dips during the chemical bath deposition process. The aim of this work is to investigate the influence on the structural, optical and electrical properties of CuS films when varying the deposition parameters aforementioned. The films were deposited at 27 °C during 45, 60, 75 and 90 minutes per dip. The CuS thin films presented an amorphous structure. The Raman spectra showed one band at 475 cm-1 (Eg) which corresponds to the CuS vibration. These notable characteristics are preserved in the samples obtained from all dips. The energy band gap values are in the range from 1.65 to 2.6 eV, the former value corresponding to the three dip process. The conductivity of CuS films increased as the grain size increased. These characteristics in CuS films make them suitable candidate for various semiconductor device applications, obtained by a rapid and low- cost technique.
| Original language | English |
|---|---|
| Pages (from-to) | 55-60 |
| Number of pages | 6 |
| Journal | Chalcogenide Letters |
| Volume | 14 |
| Issue number | 2 |
| State | Published - Feb 2017 |
Bibliographical note
Publisher Copyright:© 2017, National Institute R and D of Materials Physics. All rights reserved.
Keywords
- Chemical bath deposition
- CuS
- Multiple dips
- Thin films