Study of the growth of pbs thin films on common glass, HfO2/Si and SiO2/Si substrates, prepared by CBD

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Abstract

The goal of this work is to compare Lead Sulfide Thin Films grown on three different substrates: common glass a Hafnium oxide layer and a silicon dioxide layer. The morphology and cross section was characterized through SEM; XRD was utilized to chemically identify the compound and its structure; XPS was used to assure the chemical composition; and electrical measurements were performed to evaluate the resistivity. The morphology varies greatly from a smooth granulate amorphous phase to a polycrystalline clustered surface. All polycrystalline films are cubic Lead Sulfide. The clusters in these layers have crystallite sizes between 9 and 22 nm ranges. The obtained values for resistivity were 35.62 WΩcm, and 13.50 WΩcm for the samples with deposition time of 20 and 40 minutes, respectively.

Original languageEnglish
Pages (from-to)1205-1211
Number of pages7
JournalDigest Journal of Nanomaterials and Biostructures
Volume11
Issue number4
StatePublished - 1 Oct 2016

Bibliographical note

Publisher Copyright:
© 2016, Inst Materials Physics. All rights reserved.

Keywords

  • Chemical bath deposition
  • Lead sulfide
  • Semiconductors

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