TY - JOUR
T1 - Synthesis and characterization of In 2S 3 thin films deposited by chemical bath deposition on polyethylene naphthalate substrates
AU - Castelo-González, O. A.
AU - Santacruz-Ortega, H. C.
AU - Quevedo-López, M. A.
AU - Sotelo-Lerma, M.
PY - 2012/4
Y1 - 2012/4
N2 - Indium sulfide (In 2S 3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In 2S 3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm -1 and 1266 cm -1. Presence of oxygen during the early stages of In 2S 3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In 2S 3 can be deposited at room temperature on a flexible substrate.
AB - Indium sulfide (In 2S 3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In 2S 3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm -1 and 1266 cm -1. Presence of oxygen during the early stages of In 2S 3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In 2S 3 can be deposited at room temperature on a flexible substrate.
KW - flexible substrate
KW - In S
KW - infrared
KW - PEN
KW - Thin film
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=84858864988&partnerID=8YFLogxK
U2 - 10.1007/s11664-011-1865-9
DO - 10.1007/s11664-011-1865-9
M3 - Artículo
AN - SCOPUS:84858864988
SN - 0361-5235
VL - 41
SP - 695
EP - 700
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 4
ER -