Synthesis and Characterization of Si/Si2N2O/Si3N4 Composites from Solid-Gas Precursor System Via CVD

J. C. Flores-García, A. L. Leal-Cruz, M. I. Pech-Canul*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations


Si/Si2N2O/Si3N4 composites were prepared via chemical vapor deposition (CVD) using a solid-gas precursor system. In this method the Si-F gas species generated from the thermal decomposition of a solid precursor react with a nitrogen precursor gas to produce in situ silicon nitride and oxynitride. Cylindrical preforms (3 cm in diameter x 1.25 cm long) with 50 % porosity - prepared by the uniaxial compaction of Si powders with average particle size of 12.4 μm - were infiltrated in a multiple step mode with high purity nitrogen (HPN) and the Si-F gas species in a chemical vapor deposition (CVD) reactor. The specimens were heated at a rate of 15 °C/min up to a processing temperature of 1300 °C, and maintained isothermally for 70 minutes; then they were cooled down to room temperature. Results from the characterization by XRD and SEM show the deposition of Si2N20 and S13N4 on the Si particles, occupying the interstices of the porous preforms. Si3N4 is typically deposited with a sponge-like structure and compact deposits, while SSi2N2O is formed with a pin-like morphology and as whiskers. Depending on the number of infiltration steps, Si/Si2N2O/Si3N4 composites with tailorable porosity can be prepared.

Original languageEnglish
Title of host publicationProcessing and Properties of Advanced Ceramics and Composites
Subtitle of host publicationCeramic Transactions
Number of pages12
ISBN (Electronic)9780470522189
ISBN (Print)9780470408452
StatePublished - 5 Jun 2009
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2009 by The American Ceramic Society. All rights reserved.


  • Chemical vapor deposition
  • Diesel paniculate filters
  • Hybrid precursor chemical vapor deposition method
  • Silicon nitride
  • Solid-gas precursor system


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