Technology and reliability challenges of SUB-nm EOT high-κ/ metal gate electrode transistors

Jeff J. Peterson, Paul Kirsch, Gennadi Beisukel, Siddarth Krishuan, Prashant Majhi, Pat Lysaght, Manuel Quevedo-Lopez, Hong Jyh Li, Yoshi Senzaki, Rusty Harris, Chadwin D. Young, Rino Choi, Johnny Sim, Joel Barnett, Naim Moumen, Craig Huffmau, Mark I. Gardner, George A. Brown, Peter M. Zeitzoff, Byoung Hun LeeChuck Ramiller, Howard R. Huff

Research output: Contribution to conferencePaper

Original languageAmerican English
Pages105-118
Number of pages14
StatePublished - 1 Dec 2006
Externally publishedYes
EventProceedings - Electrochemical Society -
Duration: 1 Dec 2006 → …

Conference

ConferenceProceedings - Electrochemical Society
Period1/12/06 → …

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    Peterson, J. J., Kirsch, P., Beisukel, G., Krishuan, S., Majhi, P., Lysaght, P., Quevedo-Lopez, M., Li, H. J., Senzaki, Y., Harris, R., Young, C. D., Choi, R., Sim, J., Barnett, J., Moumen, N., Huffmau, C., Gardner, M. I., Brown, G. A., Zeitzoff, P. M., ... Huff, H. R. (2006). Technology and reliability challenges of SUB-nm EOT high-κ/ metal gate electrode transistors. 105-118. Paper presented at Proceedings - Electrochemical Society, . https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=52649145350&origin=inward