Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

M. Estrada*, M. Rivas, I. Garduño, F. Avila-Herrera, A. Cerdeira, M. Pavanello, I. Mejia, M. A. Quevedo-Lopez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The temperature dependence in the typical temperature operating range from300 K up to 370 K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200 °C is presented and modeled. It is seen that up to T = 330 K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type dependence. In the latter case, for low temperatures, the activation energy is around 0.35 eV for VGS=10 V, reducing as VGS is increased. The observed behavior is consistent with having the VRH transport mechanism as the predominant one in conduction.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalMicroelectronics Reliability
Volume56
DOIs
StatePublished - 1 Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd.

Keywords

  • IGZO TFTs
  • Temperature dependence

Fingerprint

Dive into the research topics of 'Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors'. Together they form a unique fingerprint.

Cite this