Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors

M. Estrada, M. Rivas, I. Garduño, F. Avila-Herrera, A. Cerdeira, M. Pavanello, I. Mejia, M. A. Quevedo-Lopez

Research output: Contribution to journalArticlepeer-review

11 Scopus citations
Original languageAmerican English
Pages (from-to)29-33
Number of pages5
JournalMicroelectronics Reliability
DOIs
StatePublished - 1 Jan 2016
Externally publishedYes

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