Thermal stability of hafnium-silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy

M. A. Quevedo-Lopez, J. J. Chambers, M. R. Visokay, A. Shanware, L. Colombo

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Abstract

Structure and bonding changes in ultrathin hafnium-silicate (HfSiO) and plasma-nitrided HfSiO (HfSiON) films as a result of thermal annealing are presented. To track these changes, attenuated total reflection Fourier transform infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy were used. It is shown that for films with a given Si content, HfSiON films have superior thermal stability compared to the corresponding HfSiO films. It is also demonstrated that besides giving chemical state changes for the thin-film constituents, FTIR can also be used to track interfacial SiO2 growth as well as phase separation in ultrathin high- κ films resulting from thermal annealing.

Original languageEnglish
Article number012902
JournalApplied Physics Letters
Volume87
Issue number1
DOIs
StatePublished - 4 Jul 2005
Externally publishedYes

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