TL, OSL, Raman spectroscopy and SEM characterization of boron doped diamond films

M. Pedroza-Montero*, V. Chernov, B. Castañeda, R. Meléndrez, J. A.N. Gonçalves, G. M. Sandonato, R. Bernal, C. Cruz-Vázquez, F. Brown, E. Cruz-Zaragoza, M. Barboza-Flores

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Hot filament chemically vapor deposited (HFCVD) boron doped diamond films were grown on monocrystalline silicon (111) doped with B/C ratios of 4000, 8000 and 12,000 ppm. Scanning electron micrographs show that the films are composed of well-faceted microcrystallites ranging in size from about 1 to 5 μm with no correlation with B/C concentration. The Raman spectra exhibit a sharp diamond band at 1332 cm -1 which shifts to lower wave numbers, broaden and decreases as the B/C ratio increases. An additional broad band is observed around 1200 cm -1. The beta irradiated diamond films exhibit thermoluminescence (TL) and optically stimulated luminescence (OSL) and the TL glow curves can be fitted well with four glow peaks. The kinetic parameters of these TL peaks as well as their intensities depend on B/C ratio. The OSL curves of the diamond films grown with 4000 and 8000 ppm of B/C exhibit standard decay behaviour for continuos stimulation with light of 470 nm. However, the OSL signal of the 12,000 ppm film increases initially with light stimulation, reaching a maximum to decay afterwards.

Original languageEnglish
Pages (from-to)2154-2159
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number11
DOIs
StatePublished - Sep 2005

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