Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, R. M. Wallace

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@article{fc5007f32d2d43bb99584adf6092685f,

title = "Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability",

author = "Quevedo-Lopez, {M. A.} and Krishnan, {S. A.} and Kirsch, {P. D.} and G. Pant and Gnade, {B. E.} and Wallace, {R. M.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1063/1.2150586",

language = "American English",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

AU - Quevedo-Lopez, M. A.

AU - Krishnan, S. A.

AU - Kirsch, P. D.

AU - Pant, G.

AU - Gnade, B. E.

AU - Wallace, R. M.

PY - 2005/12/1

Y1 - 2005/12/1

U2 - 10.1063/1.2150586

DO - 10.1063/1.2150586

M3 - Article

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -