Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, R. M. Wallace

Research output: Contribution to journalArticle

46 Scopus citations
Original languageAmerican English
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
DOIs
StatePublished - 1 Dec 2005
Externally publishedYes

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