Original language | American English |
---|---|
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
DOIs | |
State | Published - 1 Dec 2005 |
Externally published | Yes |
Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, G. Pant, B. E. Gnade, R. M. Wallace
Research output: Contribution to journal › Article › peer-review
46
Scopus
citations