TY - JOUR
T1 - Use of Gold Nanoparticles in Indium Gallium Nitride Growth for Improving the Photoactive Electrical Performance of p-n Junctions
AU - Valenzuela-Hernandez, Gerardo
AU - Rangel, Ricardo
AU - García, Rafael
AU - Contreras, Oscar
AU - Torres-Figueroa, Ana V.
AU - Medina-Zazueta, Luis
AU - Ramos-Carrazco, Antonio
AU - Berman Mendoza, Dainet
N1 - Publisher Copyright:
© 2024 The Authors. Published by American Chemical Society
PY - 2024/5/28
Y1 - 2024/5/28
N2 - In this report, the results of indium gallium nitride (InGaN) grown by chemical vapor deposition (CVD) on a sapphire substrate covered by gold nanoparticles (AuNPs) are discussed. AuNPs were formed by solid-state dewetting from a thin gold film. The samples on AuNPs were compared with a series of InGaN films grown with the two-step method. X-ray diffraction (XRD) and Raman spectroscopy expose higher indium incorporation in InGaN on AuNPs than in films grown by the two-step method. The effect of AuNPs on the surface morphology and compactivity of InGaN films was studied by scanning electron microscopy (SEM). An energy reduction of the absorption band edge was evidenced by UV-vis spectroscopy diffuse reflectance (DFR) and absorbance. Photoluminescence (PL) and cathodoluminescence (CL) revealed a passivation in the intensity of the near-band emission (NBE) in the InGaN/AuNPs films. An increase in the density current of 127-182 μA/cm2 in the gold-nucleated InGaN-based p-n junction was obtained by the induced localized surface plasmon resonance (LSRP) effect and the enhancement of InGaN phase stability. The implementation of AuNP-covered substrates in the growth of group III nitrides can be an alternative for improving InGaN phase miscibility and imparting suitable properties for photovoltaics applications aiming to achieve high-efficiency InGaN-based solar cells.
AB - In this report, the results of indium gallium nitride (InGaN) grown by chemical vapor deposition (CVD) on a sapphire substrate covered by gold nanoparticles (AuNPs) are discussed. AuNPs were formed by solid-state dewetting from a thin gold film. The samples on AuNPs were compared with a series of InGaN films grown with the two-step method. X-ray diffraction (XRD) and Raman spectroscopy expose higher indium incorporation in InGaN on AuNPs than in films grown by the two-step method. The effect of AuNPs on the surface morphology and compactivity of InGaN films was studied by scanning electron microscopy (SEM). An energy reduction of the absorption band edge was evidenced by UV-vis spectroscopy diffuse reflectance (DFR) and absorbance. Photoluminescence (PL) and cathodoluminescence (CL) revealed a passivation in the intensity of the near-band emission (NBE) in the InGaN/AuNPs films. An increase in the density current of 127-182 μA/cm2 in the gold-nucleated InGaN-based p-n junction was obtained by the induced localized surface plasmon resonance (LSRP) effect and the enhancement of InGaN phase stability. The implementation of AuNP-covered substrates in the growth of group III nitrides can be an alternative for improving InGaN phase miscibility and imparting suitable properties for photovoltaics applications aiming to achieve high-efficiency InGaN-based solar cells.
KW - AuNPs
KW - InGaN
KW - LSPR effects
KW - nanotechnology
KW - photovoltaic
KW - plasmonic device
UR - http://www.scopus.com/inward/record.url?scp=85192854458&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.4c00404
DO - 10.1021/acsaelm.4c00404
M3 - Artículo
AN - SCOPUS:85192854458
SN - 2637-6113
VL - 6
SP - 3759
EP - 3770
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 5
ER -