The effect of thermal annealing on the etching efficiency of different hydrofluoric acid (HF) solutions for ZrSixOy and HfSixOy was investigated. The as-deposited Hf silicate films were more difficult to etch as compared to as-deposited Zr silicate films. Film densification along with crystallization of the silicate films was thought to be responsible for the etch rate change in the silicate systems.
|Number of pages
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - Nov 2002