Wet chemical etching studies of Zr and Hf-silicate gate dielectrics

M. A. Quevedo-Lopez, M. El-Bouanani, R. M. Wallace, B. E. Gnade*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The effect of thermal annealing on the etching efficiency of different hydrofluoric acid (HF) solutions for ZrSixOy and HfSixOy was investigated. The as-deposited Hf silicate films were more difficult to etch as compared to as-deposited Zr silicate films. Film densification along with crystallization of the silicate films was thought to be responsible for the etch rate change in the silicate systems.

Original languageEnglish
Pages (from-to)1891-1897
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume20
Issue number6
DOIs
StatePublished - Nov 2002
Externally publishedYes

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