Ingeniería y ciencia de los materiales
Aluminum oxide
14%
Annealing
21%
Cadmium sulfide
53%
Capacitors
7%
Carrier concentration
9%
Carrier mobility
9%
Crystalline materials
10%
Diodes
17%
Doping (additives)
10%
Electric potential
13%
Electric properties
21%
Electrodes
8%
Energy gap
9%
Fabrication
16%
Flexible electronics
15%
Gallium
10%
Gate dielectrics
41%
Glass
10%
Heterojunctions
9%
Hot Temperature
8%
Indium
11%
Lead
9%
Leakage currents
7%
Metals
21%
Nanoparticles
9%
Neutron detectors
10%
Neutrons
9%
Optical properties
18%
Oxide films
23%
Oxide semiconductors
9%
Oxides
14%
Parameter extraction
7%
Perovskite
12%
Photolithography
8%
Polysilicon
8%
Pulsed laser deposition
31%
Rutherford backscattering spectroscopy
7%
Semiconductor materials
20%
Sol-gels
12%
Solar cells
8%
Structural properties
10%
Substrates
30%
Temperature
28%
Thin film transistors
100%
Thin films
84%
Threshold voltage
26%
Transistors
18%
X ray diffraction
10%
X ray photoelectron spectroscopy
11%
Zinc oxide
20%
Química
Ambient Reaction Temperature
7%
Amorphous Material
7%
Annealing
15%
Application
11%
Band Gap
7%
Cadmium Sulfide
32%
Capacitor
9%
Compound Mobility
25%
Cubic Space Group
5%
Deposition Technique
5%
Dielectric Material
30%
Drain Current
8%
Electrical Property
14%
Field Effect
7%
Glass
5%
Glass Substrate
7%
Hafnium Atom
5%
Leakage Current
9%
Liquid Film
45%
Metal
5%
Nanoparticle
5%
Neutron
6%
Optical Property
11%
Oxide
9%
Pentacene
13%
Point Group C∞V
5%
Polycrystalline Solid
11%
Pulsed Laser Deposition
22%
Resistance
5%
Semiconductor
18%
Simulation
7%
Solar Cell
5%
Sulfide
7%
Surface
8%
Voltage
28%
X-Ray Diffraction
5%
X-Ray Photoelectron Spectroscopy
5%
Zinc Oxide
9%
Física y astronomía
annealing
13%
baths
17%
cadmium sulfides
25%
capacitors
7%
carrier mobility
6%
characterization
10%
CMOS
6%
diodes
7%
electric potential
8%
electrical properties
10%
electrical resistivity
6%
electronics
6%
fabrication
7%
field effect transistors
9%
gels
6%
glass
5%
hafnium
14%
inverters
7%
metals
9%
neutron counters
7%
nitrogen
5%
optical properties
5%
performance
10%
photoelectron spectroscopy
8%
photolithography
6%
pulsed laser deposition
16%
room temperature
5%
Schottky diodes
5%
silicates
9%
silicon
6%
temperature
7%
thermal neutrons
6%
thin films
56%
threshold voltage
14%
transistors
36%
x ray spectroscopy
5%
x rays
6%
zinc oxides
8%
