A review of recent MOSFET source and drain resistances extraction methods using a single test device

Adelmo Ortiz-Conde; Manuel A. Quevedo-Lopez

doi:10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device

Adelmo Ortiz-Conde, Manuel A. Quevedo-Lopez

Departamento de Investigación en Polímeros y Materiales

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

1 Cita (Scopus)

Resumen

The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

Idioma original	Inglés
Título de la publicación alojada	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Editorial	Institute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)	9781728181769
DOI	https://doi.org/10.1109/EDTM50988.2021.9420846
Estado	Publicada - 8 abr 2021
Evento	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China Duración: 8 abr 2021 → 11 abr 2021

Serie de la publicación

Nombre	2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conferencia

Conferencia	5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
País/Territorio	China
Ciudad	Chengdu
Período	8/04/21 → 11/04/21

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Publisher Copyright:
© 2021 IEEE.

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10.1109/EDTM50988.2021.9420846

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Ortiz-Conde, A., & Quevedo-Lopez, M. A. (2021). A review of recent MOSFET source and drain resistances extraction methods using a single test device. En 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 [9420846] (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM50988.2021.9420846

Ortiz-Conde, Adelmo ; Quevedo-Lopez, Manuel A. / A review of recent MOSFET source and drain resistances extraction methods using a single test device. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

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abstract = "The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs. ",

keywords = "MOSFET, asymmetric parasitic drain and source series resistance, parameter extraction, thin-film transistors (TFTs)",

author = "Adelmo Ortiz-Conde and Quevedo-Lopez, {Manuel A.}",

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Ortiz-Conde, A & Quevedo-Lopez, MA 2021, A review of recent MOSFET source and drain resistances extraction methods using a single test device. En 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021., 9420846, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Institute of Electrical and Electronics Engineers Inc., 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Chengdu, China, 8/04/21. https://doi.org/10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device. / Ortiz-Conde, Adelmo; Quevedo-Lopez, Manuel A.

2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. 9420846 (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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N2 - The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

AB - The performance of MOSFETs is limited by the presence of parasitic series resistances. This article reviews three recent extraction methods to determine the values of drain and source series resistances from the measured drain current of a single three-terminal transistor. These methods can also be used in four-terminal MOSFETs.

KW - MOSFET

KW - asymmetric parasitic drain and source series resistance

KW - parameter extraction

KW - thin-film transistors (TFTs)

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Ortiz-Conde A, Quevedo-Lopez MA. A review of recent MOSFET source and drain resistances extraction methods using a single test device. En 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. 9420846. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021). doi: 10.1109/EDTM50988.2021.9420846

A review of recent MOSFET source and drain resistances extraction methods using a single test device

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