Application of ZnO schottky diodes in rectifier circuits for implementation in energy harvesting

M. Gomez-Alvarez*, I. Mejia, V. Cabrera, C. Avila-Avendano, R. García, A. Diaz-Cano, Y. Leon-Nataret, M. Quevedo-Lopez, L. Reséndiz

*Autor correspondiente de este trabajo

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

Resumen

This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low amplitude. The results match the experimental I-V curves obtained with the parameters extracted from the electrical characteristics of the experimental Schottky diodes: Si/SiO2/Cr/Au/ZnO/Al, glass/Al/ZnO/Au and glass/Al/ZnO/Pd. The results of the simulation show that the devices fabricated in this work can be a useful alternatives for rectifier circuits commonly used in energy harvesting systems, because they are capable of delivering output rectified voltages higher than 1V.

Idioma originalInglés
Páginas (desde-hasta)153-159
Número de páginas7
PublicaciónDigest Journal of Nanomaterials and Biostructures
Volumen14
N.º1
EstadoPublicada - 1 ene. 2019
Publicado de forma externa

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