Resumen
The fractional calculus has a very large diversification as it relates to applications from physical interpretations to experimental facts to
the modeling of new problems in the natural sciences. Within the framework of a recently published article, we obtained the fractional
derivative of the variable concentration x(z), the effective mass of the electron dependent on the positionm(z) and the potential energy V (z),
produced by the confinement of the electron in a semiconductor of type AlxGa1¡xAs, with which we can intuit a possible geometric and
physical interpretation. As a consequence, it is proposed the existence of three physical and geometric conservative quantities approximate
character, associated with each of these parameters of the semiconductor, which add to the many physical magnitudes that already exist in
the literature within the context of fractional variation rates. Likewise, we find that the fractional derivatives of these magnitudes, apart from
having a common critical point, manifest self-similar behavior, which could characterize them as a type of fractal associated with the type of
semiconductor structures under study.
the modeling of new problems in the natural sciences. Within the framework of a recently published article, we obtained the fractional
derivative of the variable concentration x(z), the effective mass of the electron dependent on the positionm(z) and the potential energy V (z),
produced by the confinement of the electron in a semiconductor of type AlxGa1¡xAs, with which we can intuit a possible geometric and
physical interpretation. As a consequence, it is proposed the existence of three physical and geometric conservative quantities approximate
character, associated with each of these parameters of the semiconductor, which add to the many physical magnitudes that already exist in
the literature within the context of fractional variation rates. Likewise, we find that the fractional derivatives of these magnitudes, apart from
having a common critical point, manifest self-similar behavior, which could characterize them as a type of fractal associated with the type of
semiconductor structures under study.
| Idioma original | Inglés |
|---|---|
| Número de artículo | 6 |
| Páginas (desde-hasta) | 874-880 |
| Número de páginas | 6 |
| Publicación | Revista Mexicana de Fisica |
| Volumen | 66 |
| N.º | 6 |
| Estado | Publicada - 10 nov. 2020 |
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Palabras clave
- Educative Science
- fractional derivative
- semiconductor parameter